h s i l ico n m o s f e t t e c h n o lo g y o p e rati o n f r o m 24 v t o 5 0 v h i g h p o w e r g a in e x tre m e r u g g e dn e ss i n t e r n a l i n p u t a n d o u t p u t m a tc h i n g e x c e l l e n t th e r m a l s t a b i l ity a l l g o ld b on d i n g s c h e m e p b - f re e a n d r o hs c o m p l i a n t h i g h v o lt a g e v e rtical t e c hn o lo g y is w e l l s u it e d f o r hi g h p o w e r p u ls e d ap p l i c a ti o n s in t h e l - b a n d i n clu d i n g i ff, t cas a n d mo d e - s a p p l i c a ti o n s. t a b le 1 : t y p ical rf p e r f o r m a n c e i n b ro a d b a n d t e x t f i x t u re a t 2 5 ? t e m p e r a t u re w ith rf p u lse c o n d iti o n s o f p u lse w id t h = 5 0 s a n d p u l s e d u t y c y cle = 2 % . t h e h i g h p o w e r hv v 10 1 1 - 6 0 0 d e v ice is a n en h a n c e m e n t m o d e r f m o s fet p o w e r tra n sist o r d e si g ne d f o r p u lse d a p p li c a ti o n s i n t h e l - b a n d f r o m 1 0 3 0 m h z t o 10 9 0 m h z . t h e h i g h v o l t a g e hv v fet t e c h n o lo g y p ro d u c e s o v e r 6 0 0 w o f p u ls e d o u t p u t p o w e r w h i l e o f f e r i n g h i g h g a in , h i g h e f f ic i e n c y , a n d e a s e o f m a t c h in g w it h a 5 0 v s up p l y . t h e v e rtical d e v ice stru c t u re a s s u re s h i g h rel i a b i l it y an d ru g g edn e ss a s t h e d e v ice is s p e c i f ie d t o w it h st a n d a 2 0 : 1 v s w r a t a l l ph a s e a n g les u n d e r f u l l r a t e d o u t p u t p o w e r. de v ice p a rt n u m b e r: hv v 1 0 1 1 - 6 0 0 e v a lu a ti o n k i t p a rt n u m b e r : hv v 1 0 1 1 - 6 0 0 - e k o r d e r i n g i n f o r m a t i on d es c r i p t i on t yp i c a l pe r f o r m a n c e f e a t u r es rev . a 7 5 2 5 e t h el ave n u e nor t h holly w ood, ca 91605 ( 8 1 8 ) 982- 1 2 0 0 ww w . a d s e m i . c o m s pe c i f i c a t ions are s ubje c t to change without notice. ge p a c k a ge
hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - ds 15a 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 07/15/2010 phoenix, az. 85044 ?200 9 hvvi semiconductors, inc. all rights reserved. 2 h v v 1 0 1 1 - 6 0 0 h i g h v o l t a g e , h i g h r u g g e d n e s s l - b a n d h i g h p o w e r p u l s e d t r a n s i s t o r 1 0 3 0 / 1 0 9 0 m h z , 5 0 s p u l s e , 2 % d u t y f o r t c a s , i f f a n d m o d e - s a p p l i c a t i o n s the i n novative semiconductor company! ! ! ! ! ! ! ! ! ! ! ! ! ! the hvv1011 - 6 00 device is capable of withstanding an output load mismatch corresponding to a 20:1 vswr at rated output power and nominal operating voltage across the frequency band of operation. ! ! ! ! ! ! t ypical performance at 1030 m h z at an input power of 12w. ! ! ! "#$%&' ! ()*)$+,+* ! -)'.+ ! /01, ! - 2"" ! 2*)10 3 "&.*4+!-&',)5+ ! 67 ! - ! - 8 "" ! 8),+ 3 "&.*4+!-&',)5+ ! 3 9: ;!9: ! - ! < 2" =$)>? ! 2*)10!@.**+0, ! a: ! b ! ( 2 9 ! (&c+*!21dd1e),1&0 ! fg7: ! h ! ( 10 ! <0e.,!(&c+* ! fi ! h ! j " ! ",&*)5+!j+$e+*),.*+ ! 3 a: ! ,& ! k97: ! l@ ! j m ! m.04,1&0!j+$e+*),.*+ ! f:: ! l@ ! !"#$%& ' ()*)#+,+* ' -). ' /01, ' ? m@ f ! jn+*$)'!o+d1d,)04+ ! :p:i7 ! l@qh ! "#$%&' ! ()*)$+,+* ! j+d,!@&0r1,1&0 ! s)> ! /01,d ! tsj f ! t&)r! s1d$),4n! j&'+*)04+ ! u!v!9:6:!swx ! f:y9 ! -"ho ! "#$%&' ! ()*)$+,+* ! @&0r1,1&0d ! s10 ! j#e14)' ! s)> ! /01, ! - zo=2""? ! 2*)10 3 "&.*4+!z*+)[r&c0 ! - 8" v:-;< 2 v 7 $b ! 67 ! 9: f ! 3 ! - ! < 2"" ! 2*)10!t+)[)5+!@.**+0, ! - 8" v:-;- 2" v 7: - ! 3 ! 9:: ! a:: ! \b ! < 8"" ! 8),+!t+)[)5+!@.**+0, ! - 8" v7-;- 2" v:- ! 3 ! f ! 9: ! \b ! 8 ( f ! (&c+*!8)10 ! uv 9:6:swx ;!(10v9fh ! 9i ! 9] ! 3 ! rz ! hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - ds 15a 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 07/15/2010 phoenix, az. 85044 ?200 9 hvvi semiconductors, inc. all rights reserved. 3 h v v 1 0 1 1 - 6 0 0 h i g h v o l t a g e , h i g h r u g g e d n e s s l - b a n d h i g h p o w e r p u l s e d t r a n s i s t o r 1 0 3 0 / 1 0 9 0 m h z , 5 0 s p u l s e , 2 % d u t y f o r t c a s , i f f a n d m o d e - s a p p l i c a t i o n s the i n novative semiconductor company! ! ! ! ! ! ! ! notes: 1) rated at t case = 25? 2 ) all parameters measured under pulsed conditions at 12 w in put power measured at the 10% point of the pulse with pulse width = 50 ?ec, duty cycle = 2 % and v dd = 50 v, i dq = 100ma in a broadband matched test fixture. 3 ) amount of gate voltage required to attain nominal quiescent current. 4 ) guaranteed by design. ! ! ! "#$%&' ! ()*)$+,+* ! @&0r1,1&0d ! s10 ! j#e14)' ! s)> ! /01,d ! , * a ! o1d+!j1$+ ! uv 9:6:swx ! 3 ! d g7 ! 7: ! 0" ! , _ a ! u)''!j1$+ ! uv9:6:swx ! 3 ! d 9 7 ! 7: ! 0" ! (2 a ! (.'d+!2*&&e ! uv9:6:swx ! 3 ! :p a7 ! :p` ! rz ! pulse characteristics
hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - ds 15a 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 07/15/2010 phoenix, az. 85044 ?200 9 hvvi semiconductors, inc. all rights reserved. 4 h v v 1 0 1 1 - 6 0 0 h i g h v o l t a g e , h i g h r u g g e d n e s s l - b a n d h i g h p o w e r p u l s e d t r a n s i s t o r 1 0 3 0 / 1 0 9 0 m h z , 5 0 s p u l s e , 2 % d u t y f o r t c a s , i f f a n d m o d e - s a p p l i c a t i o n s the i n novative semiconductor company! typical device performance under class ab mode of operation and rf pulse condi tions of 50 s pulse width and 2 % duty cycle with v dd = 50 v and i dq = 100m a . the device was measured at 1090mhz. !!!!!!!!!!! ! typical device performance under class ab mode of operation and rf pulse conditions of 50 s pulse width and 2 % duty cycle with v dd = 50 v and i dq = 100m a . the device was measured at 1090mhz.
hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - ds 15a 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 07/15/2010 phoenix, az. 85044 ?200 9 hvvi semiconductors, inc. all rights reserved. 5 h v v 1 0 1 1 - 6 0 0 h i g h v o l t a g e , h i g h r u g g e d n e s s l - b a n d h i g h p o w e r p u l s e d t r a n s i s t o r 1 0 3 0 / 1 0 9 0 m h z , 5 0 s p u l s e , 2 % d u t y f o r t c a s , i f f a n d m o d e - s a p p l i c a t i o n s the i n novative semiconductor company! ! ! ! !!!!!! !!!!!! ! typical device performance under class ab mode of operation and rf pulse condi tions of 50 s pulse width and 2 % duty cycle with v dd = 50 v and i dq = 100m a . the device was measured at an input power of 12w . ! !!!!!! !!!!!! ! typical device performance under class ab mode of operation and rf pulse condi tions of 50 s pulse width and 2 % duty cycle with v dd = 50 v and i dq = 100m a . the device was measured at an input power of 12 w .
hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - ds 15a 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 07/15/2010 phoenix, az. 85044 ?200 9 hvvi semiconductors, inc. all rights reserved. 6 h v v 1 0 1 1 - 6 0 0 h i g h v o l t a g e , h i g h r u g g e d n e s s l - b a n d h i g h p o w e r p u l s e d t r a n s i s t o r 1 0 3 0 / 1 0 9 0 m h z , 5 0 s p u l s e , 2 % d u t y f o r t c a s , i f f a n d m o d e - s a p p l i c a t i o n s the i n novative semiconductor company! typical device performance under class ab mode of operation at 1090mhz and rf pulse conditions of 50 s pulse width and 2 % duty cycle with v dd = 50 v and i dq = 100m a . the high voltage silicon vertical technology shows less than 2db of power degradation over an extreme case teperature rise of 125 c. measured at p1db compression point temp gain (db) power (w) power (dbm) -40c 18.7 787 59.0 0c 17.9 802 59.0 25c 17.4 733 58.7 85c 16.6 580 57.6 ! w--9:99 3 ` ::!(+*_&*$)04+!&e+*!j+$e+*),.*+
hvvi semiconductors, inc . iso 9001:2000 certified eg - 01 - ds 15a 10235 s. 51 st st. suite 100 tel: (866) 429 - hvvi (4884) or visit www.hvvi.com 07/15/2010 phoenix, az. 85044 ?200 9 hvvi semiconductors, inc. all rights reserved. 7 h v v 1 0 1 1 - 6 0 0 h i g h v o l t a g e , h i g h r u g g e d n e s s l - b a n d h i g h p o w e r p u l s e d t r a n s i s t o r 1 0 3 0 / 1 0 9 0 m h z , 5 0 s p u l s e , 2 % d u t y f o r t c a s , i f f a n d m o d e - s a p p l i c a t i o n s the i n novative semiconductor company! frequency zin* (ohms) zout* (ohms) 1030mhz 0.95 - j1.35 1.1 - j2.7 1090mhz 1.0 - j1.0 1.0 - j2.3 zin* zout* output impedance matching network input impedance matching network test circuit impedances ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! !!!! !
> l l ' & ' ' # , & & > _ ] ^ l e b j w ] [ " > _ ] ^ h k ] ] [ z d [ i i b # 8 w d z > _ ] ^ f e m [ h f k b i [ z j h w d i _ i j e h ' & ) & % ' & / & c > p " + & a i f k b i [ " ( : k j o < e h j 9 7 i " ? < < w d z c e z [ # i 7 f f b _ y w j _ e d i p a r t d e s c r i p t i on p a r t n u m b e r m a n u f a c t ur e r c 1 , c 2 : 39 p f avx 805 c h i p c apa c i t o r 712 - 1388 - 1 - n d d i g i k e y c 3 , c 7 : 39 p f a t c 1210 100 b c h i p c apa c i t o r 478 - 2646 - 1 - n d d i g i k e y c 4 : 1 k p f 100 v c h i p c apa c i t o r ( x 7 r 1206 ) 399 - 1222 - 2 - n d d i g i k e y c 5 , c 8 : 10 k p f 100 v c h i p c apa c i t o r ( x 7 r 1206 ) 399 - 1236 - 2 - n d d i g i k e y c 6 : 10 u f 6 v t an t a l u m s m d 478 - 3134 - 1 - n d d i g i k e y c 9 , c 10 : 220 u f 63 v e le c t f k s m d p c e 3 484 t r - n d d i g i k e y r 1 : 470 o h m s c h i p r e s i s t o r ( 1206 ) 311 - 470 e r c t - n d d i g i k e y r 2 : 100 k o h m s c h i p r e s i s t o r ( 1206 ) 311 - 100 k e rc t - n d d i g i k e y r f c onne c t o rs t y pe " n " r f c onne c t o rs 5919 cc - t b-7 c oa x i c o m dc d r a i n c on n c onne c t o r j a c k b a nana n y l on r e d j 151 - n d d i g i -k e y dc g r ound c onn . c onne c t o r j a c k b a nana n y l on b la c k j 152 - n d d i g i -k e y dc g a t e c onn . c onne c t o r j a c k b a nana n y l on g r ee n j 153 - n d d i g i -k e y p c b b o a rd p c b : 25 m il s t h i c k , 10 . 2 d i e l e c t r i c , 1 o z c oppe r d s e l e c t r o n i cs d e v i c e c l a m p h v 800 p a ck a ge n y l o n c l a m p f oo t f x t 00011 6 coo l i nno v a t i o n h ea t s in k c oo l i nn o v a t i o n s a l u m i nu m h ea t s i n k 3 - 252510 r s 341 1 coo l i nno v a t i o n s . s . s c r e w s ( 4 ) 4 - 40 x 1 / 4 s t a i n l e s s s t ee l s o c k e t h e x h ead p 24239 3 c oppe r s t a t e b o l t a ll o y s c r e w s ( 4 ) 4 - 40 x 1 / 2 a ll o y s o ck e t c ap sc r e w h e x h ea d s c as - 0440 - 08 c s m a ll p a r t s i n c m e t a l w a s he r ( 6 ) #4 w a s h e r z i n c p l t d s t ee l lo ck z s l w - 004 - m s m a ll p a r t s i n c a ll o y s c r e w s ( 2 ) 4 - 40 x 3 / 4 a ll o y s o c k e t c ap s c r e w h ea d s c as - 0440 - 12 m s m a ll p a r t s i n c demo n str a ti on b o a rd o u tli n e d e m o n stra t i o n ci r c u it b oa rd p ict u re hv v 1 0 1 1 - 6 0 0 d e m on stra t io n ci r c u it b oa rd b i l l o f m a t e r i a ls
p a c k a g e d i m e n s i o n s no t e : d r a w i n g i s n o t a c t u a l s i z e . s o u r c e g a t e d r a i n asi p a r t number jd a te c ode inches mm asi s e m i c o n du c t o r , i n c . ( asi ) r e s e r v e s t h e r i g h t t o m a k e c h a n g e s to i n f o r m a t i o n p u bl i s h e d i n t h i s d o c u m e n t a t a n y t i m e a n d w i t h o ut n o t i c e . t h i s do c u m e n t s up e r s e d e s a n d r e p l a c e s a l l i n f o r m a t i o n s up p l i e d p r i o r t o t h e pub l i c a t i o n h e r e o f . i n f o r m a t i o n i n t h i s d o c u m e n t i s b e l i e v e d t o b e a c c u r a t e a n d r e l i a b l e . h o w e v e r , asi d o e s n o t g i v e a n y r e p r e s e n t a t i o n s o r w a r r a n t i e s , e i t h e r e x p r e s s o r i m p l i e d , a s to t h e a c c u r a c y o r c o m p l e t e n e s s o f s u c h i n f o r m a t i o n a n d s h a l l h a v e n o l i a bi l i t y no liability for conse- -quences resulting from the use of such information. no l i c e n s e , e i t h e r e x p r e s s e d o r i m p l i e d , i s c o n v e y e d u n d e r a n y asi i n t e l l e c t u a l p r o p e r t y r i g h t s , i n c l u d i ng a n y p a t e n t r i g h t s .
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